t4 - lds -0 281 -4, rev . 1 (1 2 1568 ) ?201 2 microsemi corporation page 1 of 5 1n414 8 ub c compliant switching diode qualified per mil - prf - 19500/ 116 qualified levels : jan, jantx, and jantxv description th is 1n414 8ubc switching/signal diode features ceramic body with ceramic lid construction for military grade products per mil - prf - 19500/116 . t h is small low capacitance diode , with very fast switching speeds , is featured in a surface mount ub c package and is available in different polarities . microsemi also offers a variety of other switching/signal diodes. ub c package also available in : ub package (surface mount) 1n4148ub ub2 package (2- pin surface mount) 1n4148ub2 do - 35 package ( axial - leaded ) 1n4148 -1 do - 213aa package ( melf surface mount) 1n4148ur - 1 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of p opular jedec registered 1n4148 number . ? very low capacitance . ? very fast switching speeds with minimal reverse recovery times . ? un idirectional as well as doubling and common cathode polarities are available. ? j an, jantx, and jantxv qualification is available per mil - prf - 19500/116 . (s ee part nomenclature for all available options .) ? rohs compliant by design . applications / benefits ? high frequency data lines. ? low - profile ceramic bodied surface mount package with a ceramic lid (see package illustration). ? rs - 232 & rs C 422 i nterface n etworks. ? ethernet 10 base t. ? switching core drivers. ? lan. ? computers. maximum ratings @ 25 oc msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j & t stg - 65 to + 200 o c thermal resistance junction - to - ambient (1) r ? ja 325 o c /w thermal resistance junction - to - solder pad (1) r ? j sp 120 o c /w maximum breakdown voltage v ( br) 100 v working peak reverse voltage v rwm 75 v average rectified current @ t a = 75 oc (2 ) i o 200 ma non - repetitive sinusoidal surge current ( tp = 8.3 m s) i fsm 2 a (pk) notes: 1. see figure 2 for thermal impedance curves. 2. s ee figure 1 for derating. downloaded from: http:///
t4 - lds -0 281 -4, rev . 1 (1 2 1568 ) ?201 2 microsemi corporation page 2 of 5 1n414 8 ub c mechanical and packaging ? case: ceramic with a ceramic lid . ? terminals: gold plating over nickel under plate. ? marking: part number, date code, manufacturers id. ? tape & reel option: standard per eia - 418d. consult factory for quantities. ? weight: < 0.04 grams. ? see p ackage di mensions on last page. part nomenclature jan 1n414 8 ubc cc reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = c ommercial grade jedec type number (s ee e lectrical characteristic s t able ) p olarity cc = common cathode d = doubler blank = unidirectional ceramic lid surface mount doubler common cathode unidirectional symbols & definitions symbol definition i r reverse current: the maximum reverse (leakage) current that will flow at the specified vo ltage and temperature. i o average rectified forward current: the o utput c urrent averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. t rr reverse recovery time: the time interval between the instant the current passes through z ero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse cur rent occurs. v f forward voltage: the forward voltage the device will exhibit at a specified current (typic ally shown as maximum value). v r reverse voltage: the reverse voltage dc value, no alternating component. v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating t emperature range excluding all transient voltages (ref jesd282 - b). also sometimes known as piv. downloaded from: http:///
t4 - lds -0 281 -4, rev . 1 (1 2 1568 ) ?201 2 microsemi corporation page 3 of 5 1n414 8 ub c electrical characteristics @ 25 oc unless otherwise noted forward voltage v f1 @ i f =10ma forward voltage v f2 @ i f =100ma reverse recovery time t rr (note 1) forward recovery time t fr (note 2) reverse current i r1 @ 20 v reverse current i r2 @ 75 v reverse current i r3 @ 20 v t a =150 o c reverse current i r4 @ 75 v t a =150 o c capaci - tance c (note 3) capaci - tance c (note 4) v v ns ns na a a a pf pf 0.8 1.2 5 20 25 0.5 35 75 4.0 2.8 note 1: i f = i r = 10 ma, r l = 100 ohms + 5 % . note 3: v r = 0 v, f = 1 mhz, v sig = 50 mv (pk to pk). note 2: i f = 50 ma . note 4: v r = 1.5v, f = 1 mhz, v sig = 50 mv (pk to pk). downloaded from: http:///
t4 - lds -0 281 -4, rev . 1 (1 2 1568 ) ?201 2 microsemi corporation page 4 of 5 1n414 8 ub c graphs t a (oc) (a mbient ) figure 1 C temperature C c urrent d era ting time (s) figure 2 C thermal impedance dc operation maximum io rating (ma) theta ( c/w) downloaded from: http:///
t4 - lds -0 281 -4, rev . 1 (1 2 1568 ) ?201 2 microsemi corporation page 5 of 5 1n414 8 ub c package dimensions symbol dimensions note symbol dimensions note inch millimeters inch millimeters min max min max min max min max bh .046 .0 71 1.17 1.80 ls1 .036 .040 .091 1.02 bl .11 5 .128 2.92 3.25 ls2 .071 .079 1.81 2.01 bw .085 .108 2.16 2.74 lw .0 16 .0 24 0.41 0.61 cl .128 3.25 r .008 0.20 3 cw .108 2.74 r1 .012 0.305 ll1 .022 .038 0.56 0.96 r2 .022 0. 559 ll2 .017 .035 0.43 0.89 notes: 1 . dimen sio ns are in in ch es . m illim eters are gi ven for ge ne ral in for ma t io n onl y. 2. ceramic package only. 3 . hat che d areas on pack ag e deno te metal li zed area s. 4 . pad 1 = b ase , pad 2 = emi tt er, pad 3 = c ol l ec tor, pad 4 = s hi e ldi ng c on n ec ted to the li d. 5 . in ac co rd an ce wi th asme y 14 .5m, diame ters are eq uival en t to x sy mbolog y. downloaded from: http:///
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